| PART |
Description |
Maker |
| CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SA1696D 2SA1696C 2SC4473E |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 400MA I(C) | SOT-186
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 400MA I(C) | SOT-186 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 400mA的一（c）|的SOT - 186
|
Mospec Semiconductor, Corp.
|
| 2SA921 2SA09212SA921 2SA0921S 2SA921R |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|2
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 20mA的一（c）|92
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TE Connectivity, Ltd.
Infineon Technologies AG
Matsshita / Panasonic
|
| STP40NF12 |
N-CHANNEL 120V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N-CHANNEL 120V - 0.028W - 40A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MJD-2V16W1P3 |
120V 17W Downlight
|
Seoul Semiconductor
|
| 2SD718 |
POWER TRANSISTORS(8A/120V/80W)
POWER TRANSISTORS(8A,120V,80W)
|
MOSPEC[Mospec Semiconductor]
|
| KTC4373 |
High Voltage: VCEO=120V
|
TY Semiconductor Co., L...
|
| 2DA1201Y-15 |
120V PNP SILICON TRANSISTOR IN SOT89
|
Diodes Incorporated
|
| 587BXXX |
120V AC POWER LINE SURGE SUPPRESSOR
|
Protek Devices
|
| SDT7603 |
Trans GP BJT NPN 120V 10A
|
New Jersey Semiconductors
|
